a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 20 ma 65 v bv ceo i c = 200 ma 35 v bv ebo i e = 10 ma 4.0 v i cbo v cb = 30 v 1.5 ma h fe v ce = 25 v i c = 3.5 a 15 100 --- c ob v cb = 30 v f = 1.0 mhz 150 pf p g c v cc = 25 v p out = 80 w f = 175 mhz 6.5 65 7.0 db % npn silicon rf power transistor BLV80-28 package style .500 4l flg order code: asi10797 description: the BLV80-28 is designed for 28 volt class c vhf power amplifierapplications up to 175 mhz . features: ? c = 65 % min. at 80 w/175 mhz ? p g = 6.5 db min. at 80 w/175 mhz ? omnigold ? metalization system maximum ratings i c 9.0 a v cbo 65 v v ceo 35 v p diss 117 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c jc 1.5 o c/w
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